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Quality reliability
Each product is strictly controlled with dozens of parameters to high standards, ensuring more reliable quality
The fourth generation TRENCH MOS
Process technology
Provide practical solutions based on the needs of different customers.
Reconstruction resistance value of special conductive materials
【ASIM】 It adopts a special conductive layer with low resistance, and the block resistance can reach 22mΩ/mm ². It has a lower resistance than those made by modern processes 40% 。
The durability of sub-micron slot width reconstruction devices
【ASIM】 The application of sub-micron slot width has reduced the gate leakage capacitance, thereby enhancing the durability of the device20% 。
Peak power of sub-micron trench reconstruction
【ASIM】 In the unembedded switch power conversion state, it supports pulses up to 0.1ms, with peak power reaching 1KW/㎡P 。
Density of TRENCH MOS reconfiguration components
Productioncapacity
World-class 8-inch production line
The fully automatic production equipment optimizes the process, saving 30% of labor.
Both wafers and packaging are produced by leading domestic manufacturers and manufactured on an 8-inch production line equipped with world-class facilities. Quality is guaranteed through multiple processes, and the entire production process is traceable.
First-class production and testing equipment, and all product materials have passed the RoHS test.
All performance indicators of the product are at the leading level in the industry. The production capacity and scale are strong, and the delivery time is guaranteed.
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Ourquality testing
Create high-performance and high-quality EMC protection devices for the electronics industry
Reliability experiment
FT Test
Serial number
Test Item Abrv
Reference
Stress Condition
Sample Size/ Lots
Automotive-grade products
Non-automotive grade products
End Point
1
ESD-HBM
ANSI/ESD STM5.1 AEC-
Q100-002
R=1500Ω,C=100pF,U= Situation imposition （100～20000V） Apply according to the actual situation of the product
30pcs/1Lot
5pcs/1Lot
Damage after ESD
2
ESD-MM
ANSI/ESD STM5.1
AECQ100-002
R=0Ω,C=200pF,U=(100~4000V)，Apply according to the actual situation of the product
30pcs/1Lot
5pcs/1Lot
Damage after ESD
3
PC
JESD22-A113
Per device Specification Baking-THT(30℃ / 60%RH,
192hours or 60℃ / 60%RH,40hours)→IR(260℃,3cys)；
or 125℃ / 24H→THT(85℃ / 85%RH,168hours)→IR(260℃,3cys)
SMD All Parts for TH,TC,UHAST / PCT,H3TRB / HAST
Pre- Electrical Test;
Post- ElectricalTest;
Pre-SAT; PoSt-SAT
4
HTSL
JESD22-A103
R=1500Ω,C=100pF,U=(100~20000V)，Apply according to the actual situation of the product
77pcs/3Lots
77pcs/1Lot
0,168,500,1000hours
5
TH
JESD22-A104
Ta=85°C,RH=85%
77pcs/3Lots
77pcs/1Lot
0,100or200,500,1000cycles
6
TC
JESD22-A104
Ta =-55°C/15min, to 2~5min, to +150℃ /15min
77pcs/3Lots
77pcs/1Lot
0,100or200,500,1000cycles
7
JESD22-A118
JESD22-A104
Ta =130°C; 85%RH
77pcs/3Lots
77pcs/1Lot
0,96hours
8
HTRB
JESD22-A108MIL-
STD-750F-1038.5
GBT 4938-1985
Field-effect transistor:Ta=150℃，V=(VDSS Max)*(80%~100%)
Transistor:VR=(80%~100%)*(VDSS Max)*(80%~100%)
Voltage stabilizing diode:VR=VZ Max*(80%~100%)
Thyristor:VR=(VRRM Max)*(80%~100%)
Schottky tube:Ta=85℃,VR=(VRRM Max)*(80%~100%)
77pcs/3Lots
77pcs/1Lot
0,168,500,1000hours
9
AC/PCT
JESD22-A102
Ta=121℃, 29.7psig, 100%RH
77pcs/3Lots
77pcs/1Lot
0,96hours
10
RSH
JESD22-A 111 (SMD)
JESD22-B 106 (PTH)
SMD:Ta=260°C,10 seconds PTH:Ta=270°C,10 seconds
77pcs/1Lot
77pcs/1Lot
一
11
SD
J-STD-002
①PC : Dry Bake 155°C/4hours±15min) Or Dry Bake150°C/16hours±15min)Or Steam 4 Hours±10min
②SMD:Reflow Soldering:Ta=245±5°C，5+0/-0.5 seconds ;
PTH:Wave Soldering : Ta=260°C +5/-0°C，5 +2/-1seconds
10pcs/1Lot
10pcs/1Lot
一
12
TS
MIL-STD-750
Method 2036
2.5N For TO-92/LM;
5N For TO-220series and TO-126series
30pcs/1Lots
5pcs/1Lot
一
13
OLT
JESD22-A108
Transistor：Vc=70%VCEO,IC=PC/VC Voltage stabilizing diode：VC=VZ+1V，IC=Iz Three-terminal voltage stabilizing diode：VC=VO+1V,IC≤100mA
77pcs/3Lots
45pcs/1Lot
0,168 500,1000hours
14
HTGB
JESD22-A108
Ta=85°C to 150°C,VGS=(VGS Rating)X80%(仅MOS )
77pcs/3Lots
77pcs/1Lot
0,168 500,1000hours
15
H3TRB*
JESD22-A101
Ta=85°C RH=85%,VR=(VDS Rating)X80%(Only discrete devices)
77pcs/3Lots
/
0,168 500,1000hours
16
HAST*
JESD22A-110
Ta=130'C/85%RH,T=96 hours,V=80%VMAX Ta=110°C/85%RH,T=264hrs,V=80%VMAX，The highest is 100V
77pcs/3Lots
/
0,96hours
17
IOL*
MIL-STD-750 Method 1037
case：Ton=120s，Toff=120s，15000cycles(Only discrete devices)
77pcs/3Lots
/
0,15000hours
| Project | Non-automotive grade 2SC2383T | Automotive grade BR2SC2383TQ | ||||
|---|---|---|---|---|---|---|
Test item |
Minimum value |
Maximum value |
Test conditions |
Minimum value |
Maximum value |
Test conditions |
VCE(SAT) |
50mV |
1.050V |
IC=500mA, IB=50mA |
102.5mV |
132.3mV |
IC=500mA, IB=50mA |
BVCB0 |
165V |
500V |
IC=100uA |
427.8V |
447.8V |
IC=100uA |
BVEB0 |
6.5V |
20V |
IE=100uA |
11.52V |
11.84V |
IE=100uA |
ICB0 |
0 |
80nA |
VCB=150V |
0 |
7.533nA |
VCB=150V |
IEB0 |
0 |
80nA |
VEB=6V |
0 |
10.18nA |
VEB=6V |
BVCE01 |
165V |
400V |
IC=500uA |
204.5V |
231.1V |
IC=500uA |
BVCE02 |
120V |
400V |
IC=15uA |
203.7V |
232.5V |
IC=15uA |
DIVID |
0 |
1.065 |
BVCEO1/BVCEO2 |
0.9912 |
1.006 |
BVCEO1/BVCE02 |
ICE0 |
0 |
2.5uA |
VCE=165V |
128.9nA |
317.6nA |
VCE=165V |
HFE1 |
60 |
320 |
VCE=5V,IC=200mA |
131.3 |
197.8 |
VCE=5V,IC=200mA |
HFE2 |
50 |
320 |
VCE=5V,IC=20mA |
135.7 |
197.6 |
VCE=5V,IC=20mA |
DIVID |
0.73 |
2 |
HFE2/HFE1 |
0.9828 |
1.043 |
HFE2/HFE1 |
VFBC |
650mV |
850mV |
IB=10mA |
745mV |
800mV |
IB=10mA |
VFBE |
650mV |
850mV |
IB=10mA |
744.3mV |
800mV |
IB=10mA |
The testing of automotive-grade products is managed online through PAT. The test data is statistically analyzed to remove products outside the group from the good product specifications
Max static limit = robust mean + 6*(robust sigma)
Min static limit = robust mean - 6*(robust sigma)
Strong scientific research capabilities，Elite team
From solution selection to the mass production of complete machines, ASIM can provide customers with high-quality and efficient services at every stage, effectively shortening the project development cycle, reducing R&D costs, and ensuring mass production performance.
50+(people)
Professional R&D team
10+(people)
Senior engineer
35+(people)
Professional design team
International standardcertification
All of our production sites have been certified by ISO9001 and ISO/ISO45001.
All policies related to sustainability, health, safety and environmental protection have been integrated into our philosophy, and our production sites have also been certified by ISO14001 and ISO45001.
The products produced also meet environmental protection requirements and comply with EU standards such as RoHS, HF and REACH
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ISO 9001
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ISO 14001
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ISO 45001
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QC 080000
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Electronic chip fault detection device
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Microstrip surface mount filter
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Heat dissipation devices for electronic components
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Appearance inspection device for electronic components
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Unidirectional dual-channel TVS electrostatic protection device
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TVS tube type high-efficiency electrostatic protection bridge wire type electric detonator
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High-performance wideband filter
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High heat dissipation performance microstrip surface mount filter
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Filter components with protective performance
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A rapidly assemblable voltage-stabilizing semiconductor diode
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The packaging module of semiconductor diodes
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Common mode inductor
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Integrated filter circuit
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Integrated MOS architecture
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Control methods and systems for low-insert transient voltage suppressors
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Constant transient voltage suppressor control method and system
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An electrostatic suppressor with electrostatic protection function
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HF
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ROHS
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REACH
