ESD5E001TA Bidirectional TVS Diode Technical Specification -ASIM

ESD5E001TA Bidirectional TVS Diode Technical Specification -ASIM

2025.09.05 00:00:00
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ESD5E001TA Characteristics

1. Electrical parameters

ParameterSymbolConditionsTypical valueMaximum valueUnit
Reverse cut-off voltageVRWM--±5.0V
Reverse leakage currentIRVRWM=5V-0.2μA
Breakdown voltageVBRIT=1mA6.0-V
Clamping voltageVCIpp=1A (8/20μs)-15.0V
Clamping voltageVCIpp=2.5A (8/20μs)-20.0V
Junction capacitanceCVr=0V, f=1MHz0.080.15pF

2. Protection grade

  • ESD protection(IEC61000-4-2):
    • ±15kV(Air discharge)
    • ±10kV(Contact discharge)
  • EFT protection(IEC61000-4-4):40A(5/50ns)
  • Surge protection(IEC61000-4-5):2.5A(8/20μs)

3. Physical properties

  • Encapsulation:DFN0603-2L(SOD962)
  • Size:0.6×0.3×0.3mm(Ultra-miniature surface mount)
  • Environmental protection certification: Halogen-free, lead-free, RoHS compliant

Key design advantages

  1. Ultra-low capacitance (typical value: 0.08pF)
    • It is suitable for high-speed interfaces (such as USB 3.0/HDMI, etc.) to avoid deterioration of signal integrity.
  2. Two-way protection
    • Both positive and negative polarity transient voltages are effectively clamped, simplifying the circuit layout.
  3. Miniaturized packaging
    • It occupies only 0.18mm² of board area, making it suitable for portable devices with limited space (such as TWS headphones and smartwatches).

Typical application scenarios

  1. Portable device interface protection
    • Mobile phone USB-C/ Headphone jack
    • SIM card slot for tablet computers
  2. High-speed signal line protection
    • MIPI DSI/CSI camera interface
    • 5G millimeter-wave antenna feeder
  3. Precision circuit protection
    • Sensor signal conditioning circuit (ADC front end)
    • GPIO pins of low-power MCU

ESD5E001TA尺寸图.png


ESD5E001TA布局图.png

Key Points of circuit design

1. Layout specification

[Signal line] →───┤ESD5E001TA├───→ [Protected IC]
         │         
        GND(Complete copper plating, impedance less than 0.1Ω)
  • Grounding requirements
    • The distance from the grounding pin to the main ground shall be no more than 1.5mm
    • Avoid using jumpers for grounding

2. Selection verification formula

  • Clamping voltage verification
    image.png
  • Power verification
    image.png

Failure mode prevention

Failure phenomenonThe fundamental causeSolution
Excessive leakage currentMoisture penetration leads to insulation deteriorationSelect the nano-hydrophobic coating model
Response delayThe welding temperature is too highThe peak temperature of reflow soldering is ≤260℃
Protection failureThe impedance of the grounding loop is too largeShorten the grounding path and increase the ground via

Industry measured data

Test projectConditionsResult
        Signal distortion rate10Gbps differential signal       <0.5%
          Insertion loss        f=10GHz     -0.25dB
Performance after 30 ESD impacts±15kV air dischargeParameter drift <3%

Conclusion

        ESD5E001TAWith its ultra-low capacitance of 0.08pF, ±15kV ESD protection and 0.6mm micro package, it has become an ideal choice for high-speed interface protection of portable electronic devices. In high-end scenarios such as 5G RF front-end and medical wearable devices, it is recommended to adopt a low-impedance multi-layer board design to achieve the best performance.